
High-density interconnect via laser blind vias, mechanical buried vias and via-in-pad frees routing space for accelerator cards, optical modules and compact terminals. Supports 1+N+1 / 2+N+2 / 3+N+3 build-ups with staggered and stacked via combinations; 1–3 step structures in stable volume production, while any-layer interconnect (ELIC) and higher step counts are reviewed per project — meeting high-IO-density and short-interconnect design needs.
Laser blind vias down to 0.10 mm at 1:1 aspect ratio, stacked-via registration ±0.05 mm, HDI line width and spacing 2/2 mil on LDI. Stackups from 1+N+1 to 3+N+3 run in stable volume; any-layer and cross-step interconnect go through project engineering review.


1–3 step HDI · stacked vias / POFV · laser blind vias 0.10 mm
Get a quote for this product| Capability item | Specification range |
|---|---|
| HDI build-up stages | 1 – 3 stages |
| Min. laser blind via diameter | 0.10 mm |
| Min. mechanical drill diameter | 0.15 mm |
| Min. line width / spacing | 2 / 2 mil |
| Board thickness range | 0.4 – 3.0 mm |
| Via types | Through / blind / buried / via-in-pad / stacked vias |
| Via filling methods | Resin plugging / electroplated via filling (POFV) |
| Layer-to-layer registration accuracy | ±0.05 mm |
| Laser drilling type | CO2 laser (blind-via aspect ratio ≤ 1:1) |
| Blind-via annular ring (per side) | Standard 4 mil (limit 2 mil) |
| Hole copper thickness | 25 – 50 μm (thicker on request) |
| Surface finish options | ENIG / ENEPIG / immersion silver / immersion tin / OSP |
1+N+1, 2+N+2 and 3+N+3 with staggered or stacked vias. Any-layer (ELIC) and cross-step interconnect are reviewed per project.
0.10 mm CO2 laser blind via with aspect ratio ≤ 1:1; the mechanical drill minimum is 0.15 mm.
Yes — via-in-pad (POFV) with filled and capped copper, verified by X-ray and cross-section.